Tunnel Diode Load Line Reading Log - Part 1/2
Now I am studying South Carolina University's Online Course EL563 Section 8 Tunnel Diodes.
Part I Tunnel Diode principles Concept of Electron Tunneling (Page 30)
Reading Log
Quantum mechanics says that the electron wave nature will allow it to tunnel through the barrier. (Page 17 onwards)
When the p and n region are highly doped, the depletion region becomes very thin (~10nm).
In such case, there is a finite probability that electrons can tunnel from the conduction band of n-region to the valence band of p-region
During the tunneling the particle ENERGY DOES NOT CHANGE
When the semiconductor is very highly doped (the doping is greater than No) the Fermi level goes above the conduction band for n-type and below valence band for p-type material. These are called degenerate materials.
As more forward voltage is applied, the tunneling current drops to zero. But the regular diode forward current due to electron – hole injection increases due to lower potential barrier.
The TD reverse I-V is similar to the Zener diode with nearly zero breakdown voltage.
It has a negative differential resistance (NDR) region
Tunnel Diode differential resistance is NEGATIVE in the voltage range 100 mV – 200 mV (Question - How does he captures the scope screen?)
Nonlinear Circuit Analysis: Load Line technique (Page 17)
Circuit with the Tunnel Diode and Resistor (Page 30)
Appendices
Appendix A - Carolina University Online Course EL563
23 BJT models and equiv circuits .END |
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ReplyDelete"How does he captures the scope screen?" I guess he uses an oscilloscope with a USB port or some interface.
ReplyDeleteWell, I am going to do something like this. (1) Use Rpi4B Thonny python to tell PCA8951 DAC to repeatedly, say at 100 kHz DC sweep 0V to 1V, (2) Use my US$300, 50MHz, 1G samples/second digital scope to catch the electrons swimming through the quantum tunnel!
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